HKZ
The abbreviation HKZ (Hochdruck-Kristallzüchtungsanlage) stands for a unique high-pressure optical floating zone crystal growth furnace. It features a vertical 2-mirror setup with a highly homogeneous and to a great extent controllable light power distribution on the crystal rod. One of the key characteristics of the furnace is the ability to work at pressures of up to 300 bar with different gases and mixtures in the growth chamber.
Additionally, individual gas flow rates can be adjusted and controlled freely and independently over the complete pressure range.Using powerful xenon short arc lamps, melting temperatures over 3000 °C can be achieved. While the light power tuning range of arc lamps is limited, the thermal energy in the growth chamber is step-less adjustable between 0 and 100 % thanks to a power shutter system in the light.
Highly precise magnetically coupled linear and rotation feed through systems with pulling rates starting from 0.1 mm/h, advanced process monitoring technologies and a comfortable PLC user interface guarantee extensive control of the growth process. The temperature of feed rod, melt zone and crystal is measured directly via a patented in-situ temperature measurement system. An optional after-heater is applicable with all possible atmospheres and pressures—also with high-pressure oxygen atmospheres.
This worldwide unique setup allows the user to rule the growth of materials, which are difficult or impossible to handle at low due to the higher volatility or higher partial pressure of their elements. A very important characteristic is the highly developable and easily expandable, modular design of the HKZ furnace system, which allows add-ons and upgrades to all of current furnaces in an easy and cost-efficient way.

Technical details
Atmosphere
- Argon and oxygen (pure and in any mixture ratio)
- Many other gases possible on request
- Pressure: up to 300 bar (different version available: 10 bar, 50 bar, 150 bar, 300 bar)
- Turbulence suppression system
- PLC controlled gas flow: 0.25 l/min to 1 l/min, individually adjustable for different gases
- Vacuum: down to 1*10-5 mbar
- Turbo pump close to the process chamber, wide diameter connections
- UHV system possible on request
- Active titanium getter gas cleaning (removes O2 traces in argon down to 10-12 ppm, applicable under high-pressure conditions)
- Oxygen content measurement system
Technical details
Growth chamber
- Highly transparent material
- Pressure-proved between 0 and 300 bar (or the max. pressure depending on the version)
- Long life span due to protective tube
- Sample holder for 6,8 mm or 9,8 mm samples
Technical details
Optical heating
- Xenon short arc lamp, different kinds available between 3 kW and 15 kW
- Temperature: up to 3000 °C
- Lamp power control
- Power shutter in the light beam, step-less adjustable between 0 and 100 %
- Precise motor-driven lamp positioning unit, workable during the experiment
- Upper and lower optimized elliptical mirrors, aluminum or gold coated
- Mirror position adjustment system
Technical details
Material rod moving
- Precise magnetically coupled linear and rotation feed through system
- Pulling rate: 0.1 mm/h to 200 mm/h (lower pulling rates possible on request)
- Fast service gear (approx. 0.6 mm/s )
- Pulling length: 195 mm
- Rotation rate: 0 to 70 rpm
Technical details
Temperature measurement
- Two-color pyrometer with a patented stroboscopic measurement method
- Adjustable time interval
- Adjustable position
- Several temperature ranges
Technical details
After heater
- Versatile and modular unit
- Applicable with all possible atmospheres and pressures
- Easily exchangeable heater coils
- Highly adaptable to special needs
Technical details
Process control and monitoring
- High-resolution CCD camera with specialized lenses and filters
- Monitoring application: visual control, video recordings, snapshots and length measurements during the growth process
- Power ramp and traveling ramp functions
- Front window for direct observation of the growth chamber
- All system parameters are comfortably controllable and adjustable via a PLC-based software application with two 27" touch screens
- Safety system with protection housing, door lock system, automatic shut down function
Technical details
Required laboratory connections
- Gas supply with the intended pressure
- Exhaust air system
- Energy supply: 3-phase AC, 50 Hz, 400 V, 63 A
- Cooling water
Technical details
Furnace dimensions
- Height: 3020 mm , width: 1631 mm, depth: 920 mm
References
The following users of a HKZ have agreed to provide their contact data for exchange of experiences:
Dr. Hugo Schlich, MaTecK GmbH
Dr. A. C. Komarek, Prof. Dr. Liu Hao Tjeng, MPI CPfS Dresden
Dr. Jiaqiang Yan, Dr. Brian Sales, Oak Ridge National Laboratory
Dr. Jennifer Zheng, Dr. John F. Mitchell, Argonne National Laboratory
Dr. Qisi Wang, Prof. Dr. Jun Zhao, Fudan University Shanghai
Publications
Materials grown with the HKZ furnace system
- Bauer, A., Regnat, A., Blum, C. G., Gottlieb-Schönmeyer, S., Pedersen, B., Meven, M., Wurmehl, S, Kuneš, J & Pfleiderer, C. (2014). Low-temperature properties of single-crystal CrB2. Physical Review B, 90(6), 064414. (Also on archiv.org.)
- Omar, A., Blum, C. G., Löser, W., Büchner, B., & Wurmehl, S. (2014). Effect of annealing on spinodally decomposed Co2CrAl grown via floating zone technique. Journal of Crystal Growth, 401, 617-621. (Also on arxiv.org.)
- Brasse, M., Chioncel, L., Kuneš, J., Bauer, A., Regnat, A., Blum, C. G. F., Wurmehl, S., Pfleiderer, C., Wilde, M. A. & Grundler, D. (2013). de Haas–van Alphen effect and Fermi surface properties of single-crystal CrB2. Physical Review B, 88(15), 155138. (Also on arxiv.org.)
Publications
Methodical considerations concerning the HKZ system

Fig: First HKZ generation, working facility of MaTecK GmbH, Location ScIDre GmbH Dresden